摘要
提出了采用聚酰亚胺(PI)作为非晶铟镓锌氧(a-IGZO)薄膜晶体管(Thin-film Transistors,TFT)钝化层的制备工艺。PI成膜采用旋涂工艺,可减少钝化层成膜工艺对TFT器件沟道层的破坏,降低对器件性能的影响。PI可作为有效的钝化层,从而避免因有源层a-IGZO沟道表面气体分子吸附效应造成的TFT器件特性恶化。此外,采用PI作为钝化层的a-IGZO TFT器件,其负栅压应力(Negative Gate-bias Stress,NBS)下稳定性得到改善,可能与PI烘烤固化过程中扩散进入器件内部的氢(H)钝化有源层内的缺陷相关。
Amorphous InGaZnO thin-film transistors(a-IGZO TFTs)passivated by a polyimide(PI)layer has been fabricated.The PI passivation layer has been deposited by the spin-coating method,which could reduce the damage of back surface of a-IGZO channel caused by the passivation layer deposition process and improve the device performance.The PI passivation could effectively block the ambient atmosphere,protecting the TFTs from performance deterioration resulted by H;O and O;molecule adsorption effects.Moreover,TFTs passivated by PI showed improved stability under negative gate-bias stress(NBS).The improved stability was inferred to be related to the passivation of traps within the a-IGZO channel by hydrogen which could be diffused into the device from the PI layer during the baking process.
作者
林清平
王胜林
LIN Qingping;WANG Shenglin(College of Electronic and Computer Engineering,Shenzhen Graduate School of Peking University,Shenzhen Guangdong 518071,CHN;Shenzhen Dalton Electronic Material Co.,Ltd.,Shenzhen Guangdong 518000,CHN)
出处
《光电子技术》
CAS
2021年第4期315-319,共5页
Optoelectronic Technology
