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Anisotropic 2D materials for post-Moore photoelectric devices

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摘要 Since the discovery of two-dimensional(2D)graphene[1],2D materials have been widely investigated due to their in-triguing physical/chemical property and outstanding optoelec-tronic performance[1−3].Generally,2D materials can be di-vided into isotropy and anisotropy according to crystal struc-tures.For isotropic 2D materials like graphene and hexagon-al boron nitride,they have obvious lattice symmetry.Where-as,anisotropic 2D materials possess strong anisotropic crys-tal structure(Fig.1(a)),providing new degree of freedom for exploring 2D materials.Currently,2D materials with high aniso-tropy,due to their anisotropic electrical,optical,thermal,and phonon properties,are finding applications in polarization-sensitive photodetection,neural network construction,spin-polarized transport and other emerging fields[3−6].
出处 《Journal of Semiconductors》 EI CAS CSCD 2022年第1期1-3,共3页 半导体学报(英文版)
基金 supported by the National Natural Science Foundation of China(52172169) the Central South University Research Fund for Innovation-driven Program(2019CX024) the Fundamental Research Funds for the Central Universities(2020zzts046) the National Key Research and Development Program of China(2017YFA0206600) the National Natural Science Foundation of China(51773045,21772030,51922032,21961160720)for financial support。
关键词 ANISOTROPIC struc BORON
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