摘要
We theoretically explore the manipulation of a temporal electron-spin splitter by aδ-potential in an embedded magnetic-elec tric-barrier micro structure(EMEBM),which is constructed by patterning a ferromagnetic stripe and a Schottky-metal stripe on the top and bottom of an InAs/Al_(x)In_(1-x)As heterostructure,respectively.Spin polarization of the dwell time remains,even though aδ-potential is inserted by atomic-layer doping.Both the magnitude and sign of the spinpolarized dwell time can be manipulated by changing the weight or position of the 6-potential.Thus,a structurally controllable temporal electron-spin splitter can be obtained for spintronics device applications.
基金
supported by the Science and Technology Innovation Plan Project of Hunan Province in China(S2019JJQNJJ2177)
the National Natural Science Foundation of China(11864009)。
