摘要
类金刚石(DLC)薄膜因其硬度高、禁带宽度可调和抗辐射性好等优点成为空间太阳能电池研究的热点材料之一.采用AFORS-HET v2.5,在AM1.5、功率密度100 mW/cm^(2)的太阳光辐照条件下模拟DLC(P)/c-Si(n)/c-Si(n^(+))异质结太阳能电池的性能.通过改变P型DLC层和n型单晶硅层参数,得到太阳能电池输出性能的变化规律,并解释了性能变化的内在原因,为DLC异质结太阳能电池的性能优化提供了参考与指导.模拟结果表明:该结构太阳能电池的转换效率超过20.07%(开路电压为695.5 mV,短路电流密度为35.11 mA/cm^(2),填充因子为80.56%).同时研究了DLC(P)/c-Si(n)界面缺陷密度对DLC(P)/c-Si(n)/c-Si(n^(+))异质结太阳能电池的影响,发现降低界面缺陷密度可以有效提高太阳能电池的性能.
Diamond-like carbon(DLC)film has become one of the research focuses of solar cell due to its high hardness,adjustable band gap and high radiation resistance.In this study,DLC(P)/c-Si(n)/c-Si(n^(+))heterojunction solar cell was simulated under the condition of AM1.5 and 100 mW/cm^(2)power density solar irradiation with AFORS-HET v2.5.By changing the parameters of P-type DLC layer and n-type monocrystal silicon layer,the rule of change in the output performance of the solar cell was obtained,and the intrinsic explanation for the rule of change was introduced and elaborated,which provided the reference and guidance in the performance optimization of DLC heterojunction solar cell.The simulation results showed that the maximum conversion efficiency of the solar cell could exceed 20.07%(open circuit voltage was 695.5 mV,short circuit current density was 35.11 mA/cm^(2),the fill factor was 80.56%).Then,the influence of defect density of DLC(P)/c-Si(n)heterojunction interface on DLC(P)/c-Si(n)/c-Si(n^(+))heterojunction solar cell was studied,and it was found that the performances of solar cell could be improved by reducing the interface defect density.
作者
熊文文
何嵩
陈朝
XIONG Wenwen;HE Song;CHEN Chao(College of Energy,Xiamen University,Xiamen 361102,China)
出处
《厦门大学学报（自然科学版）》
CAS
CSCD
北大核心
2022年第1期49-57,共9页
Journal of Xiamen University：Natural Science
基金
福建省科技厅工业引导项目(2017H0038)。
