摘要
基于硅液相夹杂的裹入模型计算临界长晶速率,分析G7炉型铸造多晶硅锭底部阴影与长晶速率的关系,并探究不同热场对晶锭底部阴影的影响。设计3种不同长晶速率和2种热场的实验,根据红外探伤(IR)测试阴影图、长晶速率曲线及晶体生长界面等试验数据,对晶锭底部阴影进行深入研究。研究表明,硅锭底部阴影是底部长晶速率过快且对流较弱造成,晶锭底部长晶速率在9.82 mm/h以下,晶锭底部无阴影;底部长晶速率在9.82 mm/h以上,晶锭底部出现阴影。对于大热场G7炉,降低晶锭底部长晶速率或改变热场结构提升晶锭底部温度可消除底部阴影。
The critical crystal growth rate was calculated based on the inclusion model of silicon liquid.The relationship between growth rate and bottom shadow of ingots was analyzed in the G7 furnace,and the effect of different thermal fields at the bottom shadow of ingots was explored.We designed three different crystal growth rate experiments and two thermal fields.Based on the experimental data of infrared detector images(IR images),growth rate curves,seed interface and so on,we studied the bottom shadow of ingots deeply.The results showed that the bottom shadow of the silicon blocks is caused by the fast bottom crystal growth rate and the weak liquid convection.It was found that crystal growth rate at the bottom of ingots is below 9.82 mm/h,there is no shadow at the bottom of ingots.The bottom crystal growth rate is above 9.82 mm/h,the shadow at the bottom of ingots will be found.For the large thermal field G7 furnace,reducing the crystal growth rate at the bottom of the ingot,the bottom shadow will be eliminated,also we can change the thermal field structure to increase the temperature at the bottom of ingots,it can eliminate the bottom shadow.
作者
徐云飞
何亮
雷琦
罗鸿志
周成
毛伟
Xu Yunfei;He Liang;Lei Qi;Luo Hongzhi;Zhou Cheng;Mao Wei(LDK Solar Hi-Tech Co.,Ltd.,Xinyu 338032,China;National Photovoltaics Engineering Technology Research Center,Xinyu 338032,China;Department of Applied Chemistry,Institute of Chemistry and Materials Science,University of Science and Technology of China,Hefei 230026,China)
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2021年第11期46-50,共5页
Acta Energiae Solaris Sinica
