摘要
Stimulated Raman scattering(SRS)in a longitudinal magnetized plasma is studied by theoretical analysis and kinetic simulation.The linear growth rate derived via one-dimensional fluid theory shows the dependence on the plasma density,electron temperature,and magnetic field intensity.One-dimensional particle-in-cell simulations are carried out to examine the kinetic evolution of SRS under low magnetic intensity of w_c/w_0<0.01.There are two density regions distinguished in which the absolute growth of enveloped electrostatic waves and spectrum present quite different characteristics.In a relatively low-density plasma(ne~0.20 nc),the plasma wave presents typical absolute growth and the magnetic field alleviates linear SRS.While in the plasma whose density is near the cut-off point(ne~0.23 nc),the magnetic field induces a spectral splitting of the backscattering and forward-scattering waves.It has been observed in simulations and verified by theoretical analysis.Due to this effect,the onset of reflectivity delays,and the plasma waves form high-frequency oscillation and periodic envelope structure.The split wavenumber Dk/k0 is proportional to the magnetic field intensity and plasma density.These studies provide novel insight into the kinetic behavior of SRS in magnetized plasmas.
作者
Hongyu ZHOU
Yan YIN
Kaiqiang PAN
Chengzhuo XIAO
Jinlong JIAO
Duan XIE
Tongpu YU
Fuqiu SHAO
Hongbin ZHUO
周泓宇;银燕;潘凯强;肖成卓;矫金龙;谢端;余同普;邵福球;卓红斌(Department of Physics,National University of Defense Technology,Changsha 410073,People's Republic of China;Laser Fusion Research Center,China Academy of Engineering Physics,Mianyang 621900,People's Republic of China;Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education&Hunan Province Key Laboratory of Low-Dimensional Structured Physics and Devices,School of Physics and Electronics,Hunan University,Changsha 410082,People's Republic of China;Collaborative Innovation Center of IFSA(CICIFSA),Shanghai Jiao Tong University,Shanghai 200240,People’s Republic of China;School of Physics,Peking University,Beijing 100871,People's Republic of China;School of Electronic Information and Electrical Engineering,Changsha University,Changsha 410003,People's Republic of China;Center for Advanced Material Diagnostic Technology,Shenzhen Technology University,Shenzhen 518118,People's Republic of China)
基金
supported by the National Key Research and Development Program of China (No. 2016YFA0401100)
the Strategic Priority Re-search Program of Chinese Academy of Sciences (No. XDA25050700)
the Scientific Research Foundation of Hunan Provincial Education Department (No. 20A042)
National Natural Science Foundation of China (Nos. 11805062, 11675264, 11774430)
