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中红外锗基集成光电子研究进展 被引量:5

Advances on Mid-Infrared Germanium Integrated Photonics
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摘要 中红外(波长为2~20μm)集成光学在光谱分析、环境监测、医疗诊断、通信测距等领域具有广泛的应用前景。在现有的中红外集成光电子材料中,"IV族"半导体材料(如硅、锗、锡、石墨烯等)具有超宽的光谱带宽、出色的光电特性、良好的物理化学稳定性、器件制作与互补金属氧化物半导体(complementary metal oxide semiconductor, CMOS)技术兼容等优势,得到了广泛的关注。回顾了基于"IV族"材料的中红外集成光电子的发展历程,重点针对近年来新兴的中红外锗基集成光电子的器件和应用进行了综述,对中红外集成光电子的发展前景进行了展望和讨论。希望能够为中红外光学、硅基光子学、锗基光子学、光电材料、光学传感和光谱等领域的研究工作者提供有用的参考资料。 Significance Mid-infrared(2-20μm wavelength)photonics has extensive applications in spectroscopic analysis,environmental monitoring,medical diagnosis,free-space optical communication,and ranging,due to the distinguishable fundamental vibrational transitions of molecules and the atmospheric transmission windows(e.g.2-2.5μm,3-5μm,and 8-13μm wavelengths)in the mid-infrared spectral region.Previously,mid-infrared applications have been mainly developed based on benchtop free-space optical instruments(e.g.Fourier-transform infrared spectrometers),which inevitably suffer from expensive,heavy,and bulky setups.To overcome this limitation,mid-infrared integrated optics has been proposed and quickly developed in the past few decades.By using the nanofabrication technology,on-chip mid-infrared devices not only significantly reduce footprints,weights,and costs of mid-infrared photonic systems,but also open an avenue to explore the light-matter interaction at the nanoscale level.Nowadays,numerous optical materials have been investigated to develop mid-infrared integrated optics,namely,noble metals,low-dimensional semiconductors,chalcogenide glasses,and group-IV semiconductors.As for noble metals and low-dimensional semiconductors,high optical losses of the developed waveguides hinder the potential large-scale integration of on-chip systems.While chalcogenide-glass-waveguides have attracted a great attention in many mid-infrared applications due to their ultra-low optical losses.However,the fabrication of the chalcogenide-glass-waveguides is not fully compatible with the complementary metal-oxide-semiconductor(CMOS)technology.On the other hand,photonic devices based on group-IV semiconductors,namely,silicon,germanium,tin,have the notable advantages of low optical loss,excellent physiochemical stability,and full CMOS compatibility,which are critical for practical applications with low-cost and high-volume production requirements.Consequently,mid-infrared group-IV photonics has been a hot topic in the past few years.As for t
作者 郭荣翔 高浩然 程振洲 刘铁根 Guo Rongxiang;Gao Haoran;Cheng Zhenzhou;Liu Tiegen(School of Precision Instrument and Optoelectronics Engineering,Tianjin University,Tianjin 300072,China;Key Laboratory of Optoelectronics Information Technology,Ministry of Education,Tianjin 300072,China)
出处 《中国激光》 EI CAS CSCD 北大核心 2021年第19期23-41,共19页 Chinese Journal of Lasers
基金 国家自然科学基金(62175179,61805175)。
关键词 集成光学 集成光学器件 红外光子学 非线性光学 中红外集成光电子 锗基 integrated optics integrated optics devices infrared photonics nonlinear optics mid-infrared integrated photonics germanium
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