摘要
【目的】近年来随着摩尔定律逼近物理极限,传统的器件尺寸微缩变得越来越困难。尽管近年来人们开始尝试探索以碳基材料为代表的新材料、以量子计算为代表的新原理集成电路技术,但以传统硅基场效应晶体管为基础的CMOS电路仍将是集成电路发展的优选方案和主流趋势。为了持续提升集成电路性能和集成度,场效应晶体管器件技术出现了重大变革,并伴随着集成电路制造技术的不断革新。【方法】基于场效应晶体管器件性能提升的原理,阐述了通过引入新材料、新结构、新工艺方法,实现器件性能提升和集成度增大的先进制造技术,其中主要包括以高介电常数介质/金属栅和FinFET/SOI/Nanosheet MOSFET结构为代表的器件电学性能提升技术、以空气侧墙和Co局部接触金属材料为代表的寄生效应抑制技术以及以先进光刻和Forksheet/CFET为代表的器件布局紧凑化技术。【结果】基于这些新方法,集成电路制造技术近年来出现了诸多突破性进展,成功推进摩尔定律向更高水平延伸,也为集成电路技术在未来各应用场景下发挥关键作用奠定了基础。【结论】集成电路先进制造为基础的重要技术革新将促进信息社会的进一步发展和融合。
[Objective]Recently,conventional device scaling is becoming increasingly difficult since the physical limits such as the short channel effect have severely restricted the effectiveness of Moore’s Law.Although alternative techniques,such as Carbon-based new materials devices and non-CMOS logic like quantum computing,have been attracting interest as candidates of future circuits,the VLSI circuit based on conventional Si MOSFETs is still the most promising solution and the main trend of advanced electronics.In order to further improve the electrical properties of VLSI and obtain the larger device integration density in circuits,significant progress has been achieved in the metal-oxide-semiconductor field-effect transistor(MOSFET)technology as well as the manufacturing techniques of microelectronics.[Methods]Advanced manufacturing has been comprehensively examined for MOSFETs by applying new materials,structures,and methodologies.Important development has been achieved such as the device performance enhancement via the high-k/metal gate and FinFET/SOI/Nanosheet MOSFET techniques,suppression of parasitic effects using air-spacer,and Cobalt local contact metal,and device density enhancement through advanced lithography methods and Forksheet/CFET techniques.[Results]Despite these achievements,the advanced manufacturing techniques have been significantly optimized to obtain high performance and high-density MOSFETs in modern VLSI circuits,which satisfies the requirements of future high performance and energy-efficient VLSI.[Conclusions]We suggest that the advanced manufacture of MOSFETs be one of the most important boosters to expand the application of VLSI in future electrical and information technology.
作者
张睿
虞小鹏
程然
沈强
耿红艳
高大为
吴汉明
ZHANG Rui;YU Xiaopeng;CHENG Ran;SHEN Qiang;GENG Hongyan;GAO Dawei;WU Hanming(Institute of Advanced VLSI Manufacturing,College of Micro-Nano Electronics,Zhejiang University,Hangzhou,Zhejiang 311200,China;ZJU-Hangzhou Global Scientific and Technological Innovation Center,Hangzhou,Zhejiang 311200,China;EtownIP Microelectronics(Beijing)Co.,Ltd.,Beijing 100871,China)
出处
《数据与计算发展前沿》
CSCD
2021年第5期28-39,共12页
Frontiers of Data & Computing
关键词
集成电路
先进制造技术
电学性能
集成度
VLSI
advanced manufacturing
electrical performance
integration density
