摘要
CMOS(Complementary Metal Oxide Semiconductor)图像传感器(CMOS Image Sensor,CIS)正向着高速、大像素和低成本的方向发展,近年来晶圆级封装技术由于其小型化、低成本的优点受到广泛关注。根据结构和应用领域的不同,详细介绍了基于硅通孔(Through Silicon Via,TSV)技术的多种CIS晶圆级封装技术,并介绍和分析不同技术的应用场景和存在的挑战。
CMOS(complementary metal oxide semiconductor)image sensor(CIS)is developing towards the direction of high speed,large pixel and low cost.Due to its miniaturization and low cost,wafer level packaging technology has been widely concerned in recent years.According to the different structures and application fields,a variety of CIS wafer level packaging technologies based on through silicon via(TSV)technology are introduced in detail,and the application scenarios and challenges of different technologies are analyzed.
作者
马书英
王姣
刘轶
郑凤霞
刘玉蓉
肖智轶
MA Shuying;WANG Jiao;LIU Yi;ZHENG Fengxia;LIU Yurong;XIAO Zhiyi(Huatian Technology(Kunshan)Electronics Co.,Ltd.,Kunshan 215300,China)
出处
《电子与封装》
2021年第10期91-99,共9页
Electronics & Packaging
