摘要
采用射频等离子辅助蒸发法,在玻璃衬底上制备InN薄膜。采用X射线衍射仪(XRD)和扫描电子显微镜(SEM)对样品的结构和形貌进行表征,使用分光光度计、拉曼光谱仪和霍尔测量系统检测薄膜的光电特性。结果表明:制备的InN薄膜沿非极性晶面择优生长,薄膜表面由不规则晶粒紧密堆积而成;InN晶体的对称性存在一定缺陷,出现B1振动模式峰;室温下背景电子浓度为1.48×1023cm-3,电子迁移率为2.36×10-1cm2/(V·s);薄膜在近红外波段的透过率高达60%;室温光致发光谱中存在中心波长为573nm的发光峰。
InN thin film is prepared on glass substrates by RF plasma assisted evaporation. The structure and morphology of the films are characterized by X-ray diffraction(XRD)and scanning electron microscopy(SEM). The photoelectric properties of the films are measured by spectrophotometer, Raman spectrometer and Hall measurement system. The results show that the InN film grow preferentially along the non-polar crystal plane, and the surface of the films is composed of irregular grains. There are some defects in the symmetry of InN Crystal, and there is a peak of B1 vibration mode. The background electron concentration is 1.48×1023 cm-3 at room temperature.The electron mobility is 2.36×10-1 cm2/(V·s). The transmittance of the film is as high as 60 % in the near-infrared region. There is a photoluminescence peak with a central wavelength of 573 nm in the room temperature photoluminescence spectrum.
作者
孙辉
刘俊
陈建金
沈龙海
SUN Hui;LIU Jun;CHEN Jianjin;SHEN Longhai(Shenyang Ligong University,Shenyang 110159,China)
出处
《沈阳理工大学学报》
CAS
2021年第4期48-52,共5页
Journal of Shenyang Ligong University
基金
辽宁省教育厅自然科学基金(LG201910)。
关键词
等离子体辅助蒸发
氮化铟
光电性能
禁带宽度
plasma assisted thermal evaporation
InN
photoelectric performance
band gap
