摘要
使用8带k.p理论模型对不同Sb元素组分的InAs/GaAs_(1-x)Sb_(x)量子点进行了模拟计算。模拟结果显示InAs/GaAs_(1-x)Sb_(x)量子点在覆盖层中的Sb元素组分增加到14%后会使其能带结构转变为Ⅱ类。在这一转变过程中,载流子的波函数显示电子基态的位置基本不变,始终坐落于量子点内,而空穴基态则在Sb元素组分为10%-14%时从InAs量子点区域移动到GaAsSb覆盖层中,并最终产生电子和空穴的空间分离。研究还表明了增大量子点尺寸会削弱其子带能级间的分离趋势,进而降低量子点的带间跃迁能量。
A theoretical investigation of InAs/GaAsSb quantum dots with different Sb content by eight-band k.p theory was carried out. The simulation results show that the band structure of InAs/GaAs_(1-x)Sb_(x) QDs will change to type Ⅱ when the sb content in the capping layer increases to 14%. In this process, the wave functions of carriers indicate that the electrons state are basically unchanged and the holes state moving from InAs QD to GaAsSb CL region when the Sb content in the range of 10%-14%, eventually leading to their spatial separation. Our results also proved that the increasing of the quantum dots size will weaken the separation tendency between the subband energy levels, and then reduce the interband transition energy of the quantum dots.
作者
叶赛
季莲
YE Sai;JI Lian(School of Energy Science and Engineering,Nanjing Tech University)
出处
《建筑热能通风空调》
2021年第8期38-41,共4页
Building Energy & Environment
