摘要
针对传统的Trans-Z、Γ-Z源三电平逆变器电压增益小、器件电压应力高等问题,提出了一种高增益电源嵌入双准Y源T型三电平逆变器电路拓扑。首先对电路的结构和工作原理进行了分析,通过公式推导证明了其稳态性能,显著增加了逆变器的升压能力,有效减小了电容器、二极管的电压应力,提高了阻抗源网络输出电压的平滑度和逆变器控制的灵活性。然后,用Matlab/Simulink软件进行了仿真分析。最后,搭建实验样机进行验证。仿真和实验结果均证实了电路拓扑的可行性和优越性。
In order to solve the problems of low voltage gain and high voltage stress of the traditional trans-Z andγ-Z source three-level inverters,a high gain power supply embedded dual-quasi Y source T-type three-level inverters circuit topology is proposed.Firstly,the structure and working principle of the circuit are analyzed,and the steady-state performance of the circuit is proved by formula derivation,which significantly increases the voltage boost capacity of the inverter,effectively reduces the voltage stress of the capacitor and diode,improves the smoothness of the output voltage of the impedance source network and the flexibility of the inverter control.Then,the simulation analysis is carried out by Matlab/Simulink software.Finally,an experimental prototype was built for verification.Simulation and experimental results confirm the feasibility and superiority of the circuit topology.
作者
房绪鹏
王璞
FANG Xupeng;WANG Pu(College of Electrical Engineering and Automation,Shandong University of Science and Technology,Qingdao 266590,China)
出处
《电力系统及其自动化学报》
CSCD
北大核心
2021年第10期58-65,共8页
Proceedings of the CSU-EPSA
基金
山东省自然科学基金资助项目(ZR2016EEP10)。
关键词
准Y源
三电平
高增益
电压应力
quasi-Y-source
three-level
high gain
voltage stress
