摘要
碳化硅(SiC)半导体具有宽禁带、高临界击穿电场、高热导率等优异性能,在高温、高频、大功率、低功耗器件领域具有广阔的应用前景,因此,高效节能的SiC电力电子器件研究备受关注.然而,阻碍SiC器件发展应用的一个重要瓶颈是高性能的金属接触制备困难.本文通过对比分析SiC器件欧姆接触和肖特基接触制备的研究现状,揭示了金属/SiC接触界面特性复杂,肖特基势垒不可控等关键问题;对金属/SiC接触势垒及界面态性质的研究现状进行分析,强调了对界面势垒进行有效调控的重要意义;重点分析了近年来金属/SiC接触界面调控技术方面的重要进展,同时,对金属/SiC接触界面态本质及界面调控技术研究未来发展的方向进行了展望.
Silicon carbide(SiC)is a promising candidate for applications in high temperature,high voltage,high power,and low-power dissipation devices due to its unique properties like wide band gap,high critical electric field,and high thermal conductivity.However,one of the main bottlenecks hindering the SiC power devices from developing and being put into practical application is the fabrication of good metal/SiC contact.In this review,the research status of Ohmic contact and Schottky contact of SiC device are compared and analyzed.The complicated interface properties and uncontrollable barrier height at metal/SiC interface are revealed.In addition,the research status of metal/SiC contact barrier and interface state properties are analyzed,and the important significance of effective control of interface barrier is highlighted.Furthermore,the research progress of metal/SiC contact interface regulation technology is specially analyzed.The future development directions in the nature of metal/SiC interface states and interface control technology are finally prospected.
作者
黄玲琴
朱靖
马跃
梁庭
雷程
李永伟
谷晓钢
Huang Ling-Qin;Zhu Jing;Ma Yue;Liang Ting;Lei Cheng;Li Yong-Wei;Gu Xiao-Gang(School of Electrical Engineering and Automation,Jiangsu Normal University,Xuzhou 221000,China;Science and Technology on Electronic Test&Measurement Laboratory,North University of China,Taiyuan 030051,China)
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2021年第20期257-264,共8页
Acta Physica Sinica
基金
国家自然科学基金(批准号:62074071)资助的课题。
