摘要
基于时间分辨太赫兹光谱技术,研究了不同厚度的二硒化铂(PtSe2)薄膜在太赫兹波段的光学特性。实验结果表明,当泵浦光功率从0增强至2540μJ/cm2时,11 nm-PtSe2薄膜的电导率逐渐增大,透射太赫兹信号强度减小;而197 nm-PtSe2薄膜的电导率逐渐减小,透射太赫兹信号强度增大。由此构造的光控太赫兹调制器件的调制速度约为14 ps,工作带宽为0.2-1.8 THz,调制深度为15%-35%。研究证明PtSe2薄膜材料在高速光控太赫兹器件领域具有应用潜力。
Utilizing the time-resolved terahertz spectroscopy,the optical property of platinum selenide(PtSe2)thin films with different thicknesses in terahertz band are investigated experimentally.As the applied pump fluences increase from 0 to 2540μJ/cm2,the conductivity of 11 nm-PtSe2 film increases and further leading to the attenuation of the transmitted terahertz wave.Conversely,the conductivity of 197 nm-PtSe2 film decreases with the enhanced pump fluences that induces the increase of the transmitted terahertz wave.These characters enable PtSe2 thin film to be a photoactive terahertz modulator,which shows an ultrafast(-14 ps)and broadband(0.2-1.8 THz)modulation(15%-35%)of terahertz waves.The research provides a potential PtSe2-based platform to the active and ultrafast photonic devices at terahertz frequencies.
作者
戴子杰
康黎星
龚诚
刘政
刘伟伟
DAI Zijie;KANG Lixing;GONG Cheng;LIU Zheng;LIU Weiwei(Institute of Modern Optics,Nankai University,Tianjin 300350,China;Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology,Tianjin 300350,China;School of Materials Science and Engineering,Nanyang Technological University,Singapore 639798,Singapore;Institude of Micro-nano Optoelectronics and Terahertz Technology,Jiangsu University,Zhenjiang,Jiangsu 212013,China)
出处
《光子学报》
EI
CAS
CSCD
北大核心
2021年第8期92-99,共8页
Acta Photonica Sinica
基金
国家自然科学基金国际(地区)合作与交流项目(No.12061131010)
国家自然科学基金面上项目(No.12074198)。
关键词
太赫兹
时间分辨
超快
二硒化铂
太赫兹调制
Terahertz
Time-resolved
Ultrafast
Platinum selenide
Terahertz modulation
