摘要
Interlayer coupling in layered semiconductors can significantly affect their optoelectronic properties.However,understanding the mechanisms behind the interlayer coupling at the atomic level is not straightforward.Here,we study modulations of the electronic structure induced by the interlayer coupling in theγ-phase of indium selenide(γ-InSe)using scanning probe techniques.We observe a strong dependence of the energy gap on the sample thickness and a small effective mass along the stacking direction,which are attributed to strong interlayer coupling.In addition,the moirépatterns observed inγ-InSe display a small band-gap variation and nearly constant local differential conductivity along the patterns.This suggests that modulation of the electronic structure induced by the moirépotential is smeared out,indicating the presence of a significant interlayer coupling.Our theoretical calculations confirm that the interlayer coupling inγ-InSe is not only of the van der Waals origin,but also exhibits some degree of hybridization between the layers.Strong interlayer coupling might play an important role in the performance ofγ-InSe-based devices.
基金
Project supported by the National Natural Science Foundation of China(Grant Nos.51772087,11804089,11574350,11904094,and 51972106)
the Natural Science Foundation of Hunan Province,China(Grant Nos.2018JJ3025,2019JJ50034,and 2019JJ50073)
the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB30000000)
the Fundamental Research Funds for the Central Universities of China.
