摘要
高熵合金打破传统合金设计的桎梏,以其优异的性能成为21世纪热点材料之一,其中Al系高熵合金尤为突出。选区激光熔化技术(Seletive Laser Melting,SLM)是一种可以直接制造出复杂三维金属零件的增材制造技术,无需制作模具,省去了模具设计和制造的时间,极大地缩短了产品研发周期,节约了研发成本,具有可行的经济效益,在挖掘新型合金的性能及应用潜力方面有得天独厚的优势。综上,将选区激光熔化技术应用到高熵合金的制备可谓是"强强联合"。本文将详细介绍近年来选区激光熔化技术在Al系高熵合金制备方面的研究成果,评述Al系高熵合金的组织特征和性能提升的研究进展,指出当前选区激光熔化Al系高熵合金研究的重点和难点,并基于此,展望未来选区激光熔化成形高熵合金的研究、应用以及发展。
The high entropy alloy has broken the shackles of the traditional alloy design and become one of the hot spots in the 21 st century due to its excellent properties, among which the Al system high entropy alloy is particularly outstanding. Selective Laser Melting(SLM) is an additive manufacturing technology for direct manufacturing of three-dimensional metal parts with complex shapes. There is no need to make molds, and the time for mold design and manufacturing can be omitted, which greatly reduces the product development cycle, saves development costs,and is feasible. The economic benefits of the new alloy have unique advantages in tapping the performance and application potential of new alloys. Inconclusion, the application of SLM technology to the preparation of high-entropy alloys can be described as a "strong combination". This article will introduce in details the research results of SLM technology in the preparation of Al series high-entropy alloys in recent years, review the research progress of the microstructure and performance improvement of Al series high-entropy alloys formed by SLM technique, and point out the importance and difficulty of the current SLM process of Al series high-entropy alloys. Based on this,we look forward to the future research, application and development of laser selective melting and forming of highentropy alloys.
作者
吴文恒
张亮
卢林
WU Wenheng;ZHANG Liang;LU Lin(Shanghai Engineering Research Center of 3D Printing Materials,Shanghai 200437,China)
出处
《粉末冶金工业》
CAS
北大核心
2021年第4期1-10,共10页
Powder Metallurgy Industry
基金
上海材料研究所科技创新项目(No.21SG-13)。
关键词
高熵合金
选区激光熔化
粉末冶金
增材制造
high-entropy alloy
selective laser melting
powder metallurgy
additive manufacture
