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Asymmetrical Spin-Polarized Tunneling in a Composed-Barrier Magnetic Tunnel Junctions Under the Forward and Reverse Biases

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摘要 Based on the two-band model and nearly-free-electron approximation, the tunnel current, conductance and mag-netoresistance of the composed-barrier magnetic tunnel junctions ( MTJ ) under the forward and reverse biases are discussed, respectively, and the numerical results are compared with the experimental results of the single-barrier MTJ . We find that there exists an asymmetrical spin-polarized tunneling in this structure under the forward and reverse biases. It suggests that this type of MTJ will provide novel functions to the potential applications of traditional types of MTJ.
作者 XU Hui-ying YU Wen-xue KANG Jian MAI Zhen-hong 许汇颖;于文学;康健;麦振洪(Institute of Physics&Center for Condensed Matter Physics,Chinese Academy of Sciences,Beijing 100080;Department of Physics,Peking University,Beijing 100871)
出处 《Chinese Physics Letters》 SCIE CAS CSCD 1999年第12期919-921,共3页 中国物理快报(英文版)
基金 the Chinese Academy of Sciences under the Contract No.KJ951-AL-401 the National Natural Science Foundation of China under Grant No.19890310.

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