摘要
The thermal behavior of CHx(x=2,3)radicals and H atoms adsorbed on Si(111)surface was investigated by high-resolution electron-energy-loss spectroscopy,quadrupole mass spectrometry,and low-energy electron diffraction.Based on the analysis of thermal desorption mass spectrometry,the initial stage of diamond nucleation on Si is speculated.Compared with the result reported by Lee for diamond,it is concluded that low stability of hydrocarbon species on Si is the basic reason which results in the difficulty of diamond nucleation on perfect Si surface.
基金
Supported by the National Natural Science Foundation of China under Grant No.59632010.
