摘要
The damage removal and strain relaxation in the As^(+)-implanted Si_(0.57)Ge_(0.43) epilayers were studied by double-crystal x-ray diffractornetry and transmission electron microscopy.The results presented in this paper indicate that rapid thermal annealing at temperatures higher than 950℃ results in complete removal of irradiation damage accompained by the formation of GeAs precipitates which enhance the removal process of dislocations.
