摘要
The photoabsorption spectra,of nanoycrystalline silicon(nc-Si:H)films were measured by means of constant photoconductivity method.We investigated the changes of absorption spectra,with the increasing of crystallinity as the deposited films are amorphous,micro crystallin e and nan o-crystallin e.We found that in nc-Si:H the transition processes in the interfacial region between the grains predominate the whole range of the absorption spectra.We related the phenomenon to the structural changes in the material.
基金
Supported in part by the National Natural Science Foundation of China.