摘要
In-plane optical anisotropy which comes from the heavy hole and the light hole transitions in an InAs monolayer inserted in(311)-oriented GaAs matrix is observed by reflectance difference spectroscopy.The observed steplike density of states demonstrates that the InAs layer behaves like a two-dimensional quantum well rather than isolated quantum dots.The magnitude of the anisotropy is in good agreement with the intrinsic anisotropy of(311)orientation quantum wells,indicating that there is little structural or strain anisotropy of the InAs layer grown on(311)-oriented GaAs surface.
作者
Y.H.Chen
Z.Yang
XU Bo
WANG Zhan-guo
LIANG Ji-ben
陈涌海;杨志宇;徐波;王占国;梁基本(Department of Physics,Hong Kong University of Science and Technology,Clear Water Bay,Kowloon,Hong Kong;Laboratory of Semiconductor Materials Science,lnstitute of Semiconductors,Chinese Academy of Sciences,Beijing 100083;On leave from Laboratory of Semiconductor Materials Science,Institute of Semiconductors,ChineseAcademy of Sciences,Beijing 100083)
基金
Supported by the National Natural Science Foundation of China under Grant No.F040105.
