摘要
Heterogeneous integration of crystalline Ge layers on cleaned and H-terminated Si(111)substrates are demonstrated by employing a combination of e-beam evaporation and solid phase epitaxy techniques.High-quality single crystalline Ge(111)layers on Si(111)substrates with a smooth Ge surface and an abrupt interface between Ge and Si are obtained.An XRD rocking curve scan of the Ge(111)diffraction peak shovs a FWHM of only 260 arcsec for a 50-nm-thick Ge layer annealed at 600℃with a ramp-up rate of 20℃/s and a holding time of 1 min.The AFM images exhibit that the rms surface roughness of all the crystalline Ge layers are less than 2.1 nm.
基金
Supported by the National Basic Research Program of China under Grant Nos 2011CB309605 and 2010CB327501
the National Science&Technology Major Project of China under Grant No 2011ZX02708-003.
