摘要
The energy-band structure and non-ultraviolet photoelectric properties of a Ni/n-Si/N^(+)-SiC isotype heterostruc-ture Schottky photodiode are simulated by using Silvaco-Atlas.There are energy offsets in the conduction and valance band of the heterojunction,which are about 0.09eV and 1.79eV,respectively.The non-UV photodiode with this structure is fabricated on a 6H-SiC(0001)substrate.𝐾J–V𝑊measurements indicate that the device has good rectifying behavior with a rectification ratio up to 200 at 5V,and the turn-on voltage is about 0.7V.Under non-ultraviolet illumination of 0.6W/cm^(2),the device demonstrates a significant photoelectric response with a photocurrent density of 2.9mA/cm^(2)and an open-circuit voltage of 63.0mV.Non-ultraviolet operation of the SiC-based photoelectric device is initially realized.
基金
Supported by the National Natural Science Foundation of China under Grant No 51177134
the Natural Science Basic Research Plan in Shaanxi Province under Grant No 2012JQ8009
Scientific Research Program Funded by Shaanxi Provincial Education Department under Grant Nos 12JK0546 and 12JK0975
China Postdoctoral Science Foundation under Grant No 2013M532072
Doctoral Scientific Research Foundation of Xi’an Polytechnic University under Grant No BS1129.
