摘要
Superlattice structures resulting from vacancy ordering have been observed in many materials.Here we report vacancy ordering behavior inⅢ_(2)Ⅵ_(3)nanowires.The formation of layer-like structural vacancies has been achieved during the synthesis of In_(2)Se_(3)nanowires through a vapor-transport route.Doping In_(2)Se_(3)nanowires with small amounts of Ga during synthesis can completely change the structural vacancy ordering from a layer-like to a screw-like pattern for(In_(x)Ga_(1-x))_(2)Se_(3)nanowires.Lithium atoms can fill in the layer-like structural vacancies of In_(2)Se_(3)nanowires and generate new types of vacancy and lithium atom ordering superlattices.The screw-patterned vacancies of(In_(x)Ga_(1-x))_(2)Se_(3)nanowires show reversible lithium insertion.Our results contribute to the understanding of structure property correlations ofⅢ_(2)Ⅵ_(3)materials used in lithium ion storage,photovoltaics,and phase change memory.
基金
Y.C.acknowledges support from U.S.Department of Energy under the Award Number DE-FG36-08GOI8004.
