摘要
为快速解决大尺寸薄膜晶体管液晶显示器(TFT-LCD)产品中的高温竖向串扰(V-CT)不良,本文研究了漏电流与V-CT现象间的定量关系,用以指导TFT特性相关工艺的调整。首先,基于V-CT电压梯度曲线及TFT开关实际工作状态下的漏电流,建立了一种定量表征漏电流的大小和V-CT严重程度间关系的测试方法。然后,应用此方法对客户端评测画面(CT-SEC)下发生的高温V-CT进行研究,实验结果表明V-CT电压梯度曲线可以较好地匹配总体漏电流Ioff_total渐变规律。高温初始及长期信赖性评价条件下,V-CT不良的发生同显示面板面内的光照漏电流Ioff(Vgl_GOUT-Vpixel_255-)强相关。
In order to solve the problem of high temperature vertical crosstalk in large size thin film transistor liquid crystal display(TFT-LCD)quickly,the quantitative relationship between leakage current and V-CT phenomenon was studied to provide guidance of the process adjustment of TFT characteristics.Firstly,based on the contour map of Vgl_TCON characterized the occurrence of V-CT and the leakage current of TFT in actual working state,a method was developed to characterize the relationship between leakage current and severity of V-CT quantitatively.Secondly,according to the study of V-CT in CT-SEC image,the following conclusions are obtained:(1)the contour map and the trend of Ioff_total match well in different Vgl_TCON value;(2)V-CT is strongly correlated with the leakage current under the photo Ioff(Vgl_GOUT-Vpixel_255-)over any period in high temperature.
作者
刘俊
赵达裕
陈鹏
郭会斌
高玉杰
LIU Jun;ZHAO Da-yu;CHEN Peng;GUO Hui-bing;GAO Yu-jie(Wuhan BOE Optoelectronic Technology Co., Ltd., Wuhan 430000, China)
出处
《液晶与显示》
CAS
CSCD
北大核心
2021年第8期1128-1135,共8页
Chinese Journal of Liquid Crystals and Displays
