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绝缘层等离子处理对有机薄膜晶体管突触性能的影响 被引量:1

Impact of plasma treatment of dielectric layer on synaptic performance of organic thin film transistors
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摘要 在冯·诺依曼架构陷入瓶颈的时代背景下,受生物神经启发而演化的人工突触器件获得了广泛关注,加速了人们迈向人工智能时代的脚步。本文通过在P型有机薄膜晶体管(OTFT)绝缘层SiO2表面进行等离子处理,探究了界面处理引入羟基对OTFT突触性能的影响。具体对绝缘层不同等离子处理时长的OTFT进行了突触行为的模拟和对比,包括兴奋性后突触后电流(EPSC)、双脉冲易化(PPF)、长程可塑性(LTP)等。突触特性的产生是由于等离子处理给半导体层/绝缘层界面引入的羟基对电子进行了捕获。而随着等离子处理时间的增加,绝缘层表面更多的羟基使得OTFT表现出更强的记忆和保持能力、更高的线性度,更有利于其在类脑学习、神经计算等方面的应用。 Under the background of the bottleneck of Von Neumann architecture,artificial synaptic devices inspired by biological nerve have gained extensive attention to accelerate people's steps towards the era of artificial intelligence.In this study,the effect of hydroxyl group on the synaptic performance of p-type organic thin film transistor(OTFT)is investigated by plasma treatment on the surface of SiO2 dielectric layer.The synaptic behaviors of OTFTs with different plasma treatment time are simulated and compared,including Excitatory Post-Synaptic Current(EPSC),Paired Pulse Facilitation(PPF)and Long-term Potentiation(LTP).The generation of synaptic properties is due to the electrons being trapped by the hydroxyl groups introduced into the semiconductor layer/dielectric layer interface by plasma treatment.With the increase of plasma treatment time,more hydroxyl groups on the surface of the dielectric layer make OTFTs exhibit better memory and retention capabilities,and higher linearity,which is more conducive to its application in brain-like learning and neural computing.
作者 饶智超 汪秀梅 刘亚倩 李恩龙 俞礽坚 陈惠鹏 张国成 RAO Zhi-chao;WANG Xiu-mei;LIU Ya-qian;LI En-long;YU Reng-jian;CHEN Hui-peng;ZHANG Guo-cheng(Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China;Research Center for Microelectronics Technology, Fujian University of Technology, Fuzhou 350108, China)
出处 《液晶与显示》 CAS CSCD 北大核心 2021年第8期1093-1100,共8页 Chinese Journal of Liquid Crystals and Displays
基金 福建省自然科学基金(No.2017J05097,No.2018J01535) 科研启动基金(No.GY-Z20041)。
关键词 有机薄膜晶体管 人工突触 表面修饰 等离子处理 organic thin film transistor artificial synapse surface modification plasma treatment
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