摘要
利用可饱和吸收半导体GaAs作为被动调Q元件和F P输出耦合镜 ,实现了半导体激光器 (LD)抽运Nd :YVO4激光调Q运转 ,获得脉宽度为 4 7ns,重复频率为 1183kHz,平均功率为 4 30mW ,光束质量为M2 =1 13的TEM0 0 激光基横模输出 ,调Q抽运阈值为 170 0mW .并数值求解了含有GaAs被动调Q兼输出耦合的速率方程 ,分析了GaAs被动调Q机理以及脉宽宽度、重复频率、平均功率随抽运速率、腔长的变化关系 ,理论与实验结果相一致 .为多功能综合型微型调Q固体激光器提供了简单有效的方法 .
Passive Q switched operation of a laser diode pumped laser is studied with a saturable absorber GaAs as a passive Q switched component and F P output coupler. The Q switched pulse duration is 47ns, pulse repetition rate is 1183 kHz, pulse average power is 430mW, beam quality M 2 is equal to 1 13 and the laser threshold of passive Q switching is 1700mW. We performed numerical calculations of coupled wave equations for the case of GaAs playing the role as mentioned above, discussed the passive Q switched mechanism and the dependence of pulse duration, pulse repetition rate and average power on the pumping rate and laser cavity length, which was in good agreement with the experimental results. A brief and effective technique is provided for compact Q switched solid state laser having multiple functions.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2002年第12期2756-2760,共5页
Acta Physica Sinica
基金
国防科技重点实验室基金资助的课题~~
