摘要
This paper presents a novel de-embedding technique of packaged high-powertransistors. With the proposed technique, the packaged model of the power amplifier (PA)tube can be divided into the frequency independent de-embedded intrinsic device (DID)and the frequency dependent internal parasitic network (IPN), which is of great help in reducingthe design complexity of a broadband PA. Different from the conventional techniqueof parasitic extraction, the proposed technique only requires external measurements.The frequency independent characteristic of DID is verified and the IPN is modeledand calibrated for a 50 W gallium-nitride (GaN) transistor. At last, a broadbandDoherty PA is fabricated with the de-embedding technique. According to the measured results,the PA exhibits satisfactory power and efficiency performance.
