摘要
绝缘栅双极型晶体管(IGBT)的快速开关动作会产生较大的电压变化率和电流变化率,这可能会导致严重的过电压和电磁干扰(EMI)问题,从而影响电力电子系统的安全性和稳定性。为分析这些潜在问题,精确的IGBT模型在电力电子电路仿真中必不可少。通过Ansys Simplorer软件建立了一种结合数据手册和双脉冲测试数据的IGBT模块器件级行为模型,并搭建了相应的IGBT模块双脉冲仿真电路,通过仿真结果与实测结果之间的比较,验证了该模型的有效性。
As insulated gate bipolar transistor(IGBT)switches fast,large voltage change rate and current change rate will be generated,which can lead to severe overvoltage and electromagnetic interference(EMI)problems,affecting the safety and stability of power electronic system.To analyze these problems,an accurate IGBT model is essential in power electronic circuit simulation.A device level behavioral model of IGBT module that combines datasheet and doublepulse experimental test is established through Simplorer software,and the corresponding double-pulse simulation circuit is built.The effectiveness of the model is verified by comparing the simulation results with measured results.
作者
许哲翔
李文鑫
袁文琦
陈恒林
XU Zhe-xiang;LI Wen-xin;YUAN Wen-qi;CHEN Heng-lin(Zhejiang University,Hangzhou 310027,China)
出处
《电力电子技术》
CSCD
北大核心
2021年第6期146-148,156,共4页
Power Electronics
基金
国家重点研发计划(2018YFB1500700)。
