摘要
为了提高石墨烯基器件的光电响应性能,采用化学气相沉积法制备单层石墨烯,制备石墨烯/二氧化硅/硅结构器件;采用紫外可见分光光度计、光学显微镜以及拉曼光谱对石墨烯薄膜进行材料特性表征,测试和分析不同结构参数的石墨烯器件在光辐照下的光电特性。研究结果表明:当甲烷流量为30 sccm,反应温度为1030℃,退火时间为20 min时制备单层石墨烯,并将其转移到50 nm二氧化硅及硅基底上形成器件,在偏压为5 V时器件的响应度最高可达0.37 A·W-1,表现出优异的光电特性。
In order to improve the photoelectric response of a graphene based photoelectric detector,single layer graphene was prepared by chemical vapor deposition.And the devices with the graphene/silicon dioxide/silicon structures were fabricated.The properties of the graphene film were characterized by using a UV visible spectrophotometer,an optical microscope and a Raman spectroscope,respectively.And the photoelectric properties of the graphene devices with different structure parameters were analyzed under light irradiation.The results show that single layer graphene could be prepared under the conditions that the methane flow rate was 30 sccm,the reaction temperature 1030℃and the annealing time 20 min.And then it was transferred to 50 nm silica and silicon to form the device,whose highest responsivity reached 0.37 A·W-1 under the bias voltage of 5 V.It is concluded that the device has excellent photoelectric properties.
作者
胡茜
梁海锋
蔡长龙
张颖莉
张袆袆
HU Qian;LIANG Haifeng;CAI Changlong;ZHANG Yingli;ZHANG Huihui(School of Optoelectronic Engineering,Xi’an Technological University,Xi’an 710021,China)
出处
《西安工业大学学报》
CAS
2021年第3期308-314,322,共8页
Journal of Xi’an Technological University
基金
陕西省科技厅重点创新产业链项目(2018ZDCXL-GY-08-02-01)。
关键词
石墨烯
MIS结
介质厚度
光电响应
graphene
MIS junction
dielectric thickness
photoresponse
