摘要
Recently,2-μm wave band has gained increasing interest due to its potential application for next-generation optical communication.But the development of 2-μm optical communications is substantially hampered by the modulation speed due to the device bandwidth constraints.Thus,a high-speed modulator is highly demanded at 2μm.Motivated by this prospect,we demonstrate a high-speed silicon Mach–Zehnder modulator for a 2-μm wave band.The device is configured as a single-ended push–pull structure with waveguide electrorefraction via the free carrier plasma effect.The modulator was fabricated via a multiproject wafer shuttle run at a commercial silicon photonic foundry.The modulation efficiency of a single arm is measured to be 1.6 V·cm.The high-speed characterization is also performed,and the modulation speed can reach 80 Gbit/s with 4-level pulse amplitude modulation(PAM-4)formats.
基金
National Natural Science Foundation of China(61875049,61875124,61935011)
Science,Technology and Innovation Commission of Shenzhen Municipality(JCYJ2016042718380345,JCYJ20180306171923592,JCYJ20180507183418012,JSGG20190819175801678,KQJSCX20180328165451777).
