摘要
该文介绍了一种工作于毫米波频段的宽中频(IF)下变频器。该下变频器基于无源双平衡的设计架构,片上集成了射频(RF)和本振(LO)巴伦。为了优化无源下变频器的增益、带宽和隔离度性能,电路设计中引入了栅极感性化技术。测试结果表明,该下变频器的中频带宽覆盖0.5~12 GHz。在频率为30 GHz、幅度为4 dBm的LO信号驱动下,电路的变频增益为–8.5~–5.5 dB。当固定IF为0.5 GHz、LO幅度为4 dBm时,变频增益随25~45 GHz的RF信号在–7.9~–5.9 dB范围内变化,波动幅度为2 dB。LO-IF,LO-RF,RF-IF的隔离度测试结果分别优于42,50,43 dB。该下变频器芯片采用TSMC 90 nm CMOS工艺设计,芯片面积为0.4 mm^(2)。
A wide-Intermediate-Frequency(IF)down-conversion mixer operating in millimeter-wave band is proposed.The mixer is designed based on a passive double-balanced structure integrating Radio-Frequency(RF)and Local-Oscillator(LO)baluns.To optimize the performances in terms of the Conversion Gain(CG),bandwidth and isolations of the mixer,the gate-inductive technique is employed.The measured results show that the mixer features a wide IF bandwidth from 0.5 to 12 GHz.A measured CG of–8.5~–5.5 dB is achieved within such a wide IF band at a LO power(PLO)of 4 dBm and a LO frequency(fLO)of 30 GHz.The proposed mixer also achieves a CG with a ripple of 2 dB from–7.9 to–5.9 dB in a wide RF band(fRF)from 25 to 45 GHz at a PLO of 4 dBm and a fixed IF frequency(fIF)of 0.5 GHz.The measured LO-to-IF,LO-to-RF and RFto-IF isolations are better than 42,50 and 43 dB,respectively.The chip is fabricated in TSMC 90 nm CMOS process with an area of 0.4 mm^(2).
作者
杨格亮
李斌
YANG Geliang;LI Bin(The 54th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050081,China)
出处
《电子与信息学报》
EI
CSCD
北大核心
2021年第6期1603-1608,共6页
Journal of Electronics & Information Technology
基金
河北省省级科技计划(18960202D)。
