摘要
制造肖特基型Ni/p-GaN/AlGaN/GaN结构的p-GaN栅极器件,并研究该器件在不同温度与正向偏压下的电致发光现象.当栅极偏压大于4 V时,可以观测到源自p-GaN层的电致发光;当栅极偏压大于6 V时,可以观测到源自沟道层的氮化镓带边发光;当温度升高时,电致发光的强度增加.电致发光光谱随偏压及温度的演变过程,揭示了p-GaN栅结构中电子和空穴的非对称性注入过程,以及Ni/p-GaN界面处的热致空穴注入增强效应.研究有助于理解和提高p-GaN栅功率器件的稳定性和可靠性.
In this paper,we fabricate a Shcottky-type Ni/p-GaN/AlGaN/GaN device,and investigate its electroluminescence characteristics under the different forward bias voltages and at different temperatures.We find that when a forward gate bias is greater than 4 V,the electroluminescence comes from the p-GaN layer,indicating that electrons are injected from the channel into the p-GaN layer.While the forward gate bias is higher than 6 V,the GaN band edge emission emerges,indicating that the holes start to be injected into the channel region.As the temperature increases,the intensity of electroluminescence increases significantly,which reveals that the hole injection at the Ni/p-GaN interface is thermally enhanced.This work is essential for comprehensive understanding and improving the stability and reliability of the p-GaN gate power devices.
作者
邱然
刘禹涵
李百奎
QIU Ran;LIU Yuhan;LI Baikui(College of Physics and Optoelectronic Engineering,Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province,Shenzhen University,Shenzhen 518060,Guangdong Province,P.R.China)
出处
《深圳大学学报（理工版）》
EI
CAS
CSCD
北大核心
2021年第3期227-231,共5页
Journal of Shenzhen University(Science and Engineering)
基金
国家自然科学基金资助项目(61604098)
深圳大学科研启动基金资助项目(860-000002110207)。
关键词
光学工程
氮化镓
功率电子器件
高电子迁移率场效应管
常关型
栅极工程
电致发光
optical engineering
gallium nitride(GaN)
power electronic device
high electron mobility transistors(HEMTs)
normally-off
gate engineering
electroluminescence
