摘要
对目前基于过渡金属硫族化合物(TMD)材料(MoS_(2)、WSe_(2)等)的互补金属氧化物半导体(CMOS)反相器电路相关研究进行了综述。总结了TMD材料的物理性质、制备方法和基于TMD的场效应晶体管器件的研究进展。对基于TMD的集成电路技术研究进行了介绍与分析。分别在结构设计、集成工艺、性能优化及电路集成等方面对基于TMD材料的CMOS反相器电路进行了总结与分析。介绍了两种集成结构及对应的工艺流程,详细分析了CMOS反相器电路性能优化的方法。最后指出了目前的关键挑战及未来的发展趋势。
The related researches of complementary metal oxide semiconductor(CMOS)inverter circuits based on transition metal dichalcogenide(TMD)materials(MoS_(2)and WSe_(2),et al)are reviewed.The research progresses of physical properties and preparation methods of TMD materials and the field effect transistor devices based on TMDs are summarized.The researches on the integrated circuits technology based on TMDs are introduced and analyzed.The CMOS inverter circuits based on TMDs are summarized and analyzed in the aspects of structure design,integration process,performance optimization and circuit integration.Two kinds of integrated structures and the corresponding technological processes are introduced,the methods of performance optimization of the CMOS inverter circuits are analyzed in detail.Finally,the current key challenges and future development trends are pointed out.
作者
张璐
张亚东
殷华湘
Zhang Lu;Zhang Yadong;Yin Huaxiang(Key Laboratory of Microelectronics Devices and Integration Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China)
出处
《微纳电子技术》
CAS
北大核心
2021年第3期185-195,共11页
Micronanoelectronic Technology
基金
国家重点研发计划资助项目(2016YFA0202300)。
