摘要
为了揭示低温退火温度对硅晶圆内V-O_(2)对介观演变的影响,基于所建相场模型及其应用程序,对2个不同温度下退火的硅晶圆中V-O_(2)对演变过程进行了仿真.结果表明:当低温退火温度降低时,V-O_(2)对变化速率减慢、数量减少,这与相应的空位相对浓度演变及其均匀化过程有关.
In order to reveal the effect of low-temperature annealing temperature on the evolution of V-O_(2) pairs in the silicon monocrystalline wafer during low-temperature annealing,the evolutional process of V-O_(2) pairs in two silicon wafers annealed at different temperatures was simulated based on the established phase field model and its application program.The results show that when the low-temperature annealing temperature decreases,the change rate of V-O_(2) pairs slows down and the number decreases,which is related to the evolution of the relative vacancy concentration and its homogenization process.
作者
关小军
关宇昕
王善文
GUAN Xiaojun;GUAN Yuxin;WANG Shanwen(School of Material Science and Engineering,Shandong University,Jinan 250061,China;Outpie Partners B.V.,High\|Tech Campus,Eindhoven 5656AE,Netherlands)
出处
《徐州工程学院学报（自然科学版）》
CAS
2021年第1期1-6,共6页
Journal of Xuzhou Institute of Technology(Natural Sciences Edition)
基金
山东大学晶体材料国家重点实验室开放课题(KF1303)。
关键词
仿真
硅晶圆
V-O_(2)对
温度
低温退火
simulation
silicon wafer
V-O_(2)pair
temperature
low-temperature annealing
