摘要
Molecular interaction in two-dimensional(2D)van der Waals(vdW)interfaces has drawn tremendous attention for extraordinary materials characteristics.Sofar sensing characteristics of molecular interaction has been exploited extensively to reach the detection limit to a few parts-per-billion(ppb)of molecules and far less attention is given to the evolution of persistent current state due to the molecular exposure.Our study focuses on molecular memory operation of MoS_(2)-graphene heterostructure based field effect transistor.Metastable resistance state of the device due to the external perturbation of molecules is tuned to get a nearly relaxation free current state at much lower molecular concentration of 10 ppb tofacilitate non-volatile memory features for molecular memory operation.An ultrafast switching operation in milli-second order is achieved at room temperature for the fastest recovery obtained sofar in any molecular sensor.The process is co-controlled both by molecular as well as external charge density.
基金
A.M.would like to acknowledge Department of Science and Technology(DST),India for the research grant(DST1682).
