摘要
Two-dimensional(2D)MoS_(2)with appealing physical properties is a promising candidate for next-generation electronic and optoelectronic devices,where the ultrathin MoS_(2)is usually laid on or gated by a dielectric oxide layer.The oxide/MoS_(2)interfaces widely existing in these devices have significant impacts on the carrier transport of the MoS_(2)channel by diverse interface interactions.Artificial design of the oxide/MoS_(2)interfaces would provide an effective way to break through the performance limit of the 2D devices but has yet been well explored.Here,we report a high-performance MoS_(2)-based phototransistor with an enhanced photoresponse by interfacing few-layer MoS_(2)with an ultrathin Ti0_(2)layer.The Ti0_(2)is deposited on MoS_(2)through the oxidation of an e-beam-evaporated ultrathin Ti layer.Upon a visible-light illumination,the fabricated Ti0_(2)/MoS_(2)phototransistor exhibits a responsivity of up to 2,199 A/W at a gate voltage of 60 V and a detectivity of up to 1.67×10^(13)Jones at a zero-gate voltage under a power density of 23.2μW/mm^(2).These values are 4.0 and 4.2 times those of the pure MoS_(2)phototransistor.The significantly enhanced photoresponse of Ti0_(2)/MoS_(2)device can be attributed to both interface charge transfer and photogating effects.Our results not only provide valuable insights into the interactions at Ti0_(2)/MoS_(2)interface,but also may inspire new approach to develop other novel optoelectronic devices based on 2D layered materials.
基金
the National Key Research and Development Program of China(No.2018YFA0703700)
the National Natural Science Foundation of China(Nos.11974041,51971025)
111 Project(No.B170003)
the Fundamental Research Funds for the Central Universities(No.FRF-BD-19-016A).
