摘要
在硅衬底上通过金属有机化学气相沉积(MOCVD)生长氮化镓外延片,经过芯片工艺加工成尺寸在4 mil×4 mil至7 mil×7 mil的蓝绿Mini LED芯片,再匹配普通或反极性红光LED芯片,可以制作全垂直结构LED芯片的超高清全彩显示屏。主要应用在户内外显示、高清娱乐、远程视频会议等场景应用。相较于当前的蓝宝石衬底的蓝绿LED芯片有节省器件空间、生产设备效率高、可靠性好、显示效果优良,可以制作间距在P1.0及以下的超高清显示屏等优点。相同尺寸的垂直结构的mini蓝绿芯片较普通蓝宝石的发光面积要大20%~40%,因蓝宝石的N电极要占用芯片发光区面积,而垂直芯片则没有此项面积损失。
Gan epitaxial wafers were grown on silicon substrates by organic vapor phase epitaxy(MOCVD),and then processed into blue-green Mini LED chips with sizes ranging from 4 mil×4 mil to 7 mil×7 mil.And it then was matched with ordinary or reverse polarity red LED chips,to fabricate the ultra-high definition full-color display panels with full vertical structure.It is mainly used in indoor and outdoor display,high-definition entertainment,remote video conference and other scene applications.Compared with the current blue-green LED chip on sapphire substrate,it has the advantages of saving device space,high efficiency of production equipment,good reliability,excellent display effect,and the ability can make ultra-high-definition display screen with spacing between P1.0 and below.The luminescent area of the same size with vertical structure Mini blue-green chip is 20%~40%larger than that of ordinary sapphire.It is because the n-electrode of sapphire occupies the luminous area of the chip,while the vertical chip has no such area loss.
作者
梁伏波
杨小东
封波
LIANG Fubo;YANG Xiaodong;FENG Bo(Lattice Power(Jiangxi) Corporation, Nanchang 330029,China)
出处
《照明工程学报》
2021年第1期23-27,共5页
China Illuminating Engineering Journal
基金
国家重点研发计划项目——超高密度小间距LED显示关键技术开发与应用示范。
