摘要
利用脉冲激光沉积法在Nb:SrTiO3(NSTO)单晶衬底上制备了NiO薄膜并构筑了Pt/NiO/NSTO异质结器件。该器件表现出典型的双极性阻变行为,具有多级电阻变换特性和优异的保持与翻转性能。在光照作用下,器件高阻态(high resistance state,HRS)的电阻值减小到暗场下电阻值的约1/100,而低阻态(low resistance state,LRS)的阻值无明显变化。对器件磁性的研究表明,LRS下的饱和磁化强度明显高于初始态(initial state,IS)和HRS下的饱和磁化强度。这些结果归因于NiO/NSTO界面的电子注入束缚/解束缚和氧空位迁移。该器件在非易失性多级存储、光敏、磁电等多功能器件中有潜在的应用价值。
NiO thin films were prepared on Nb:SrTiO3(NSTO)single crystal substrates by pulsed laser deposition to fabricate Pt/NiO/NSTO heterojunction devices.The results show that the devices have typical bipolar resistive switching,multilevel resistive switching characteristics and excellent retention and switching performances.And under the effect of light,the resistance of the high resistance state(HRS)of the device is reduced to approximately 1/100 of the resistance in the dark field,while the resistance of the low resistance state(LRS)has no significant change.Research on the magnetic properties of the device shows that the saturation magnetization of LRS is significantly higher than that of the initial state(IS)and HRS.These results can be attributed to the electrons trapping/detrapping and oxygen vacancy migration in the NiO/NSTO interface.The devices have application potentials in non-volatile multilevel storage,photosensitive,magnetoelectronic and other multi-functional devices.
作者
丁华琪
朱永丹
程向阳
谢帅
李美亚
DING Huaqi;ZHU Yongdan;CHENG Xiangyang;XIE Shuai;LI Meiya(School of Physics and Technology,Wuhan University,Wuhan 430072,Hubei,China;School of Information Engineering,Hubei Minzu University,Enshi 445000,Hubei,China)
出处
《武汉大学学报（理学版）》
CAS
CSCD
北大核心
2020年第6期565-571,共7页
Journal of Wuhan University:Natural Science Edition
基金
国家自然科学基金(11504101)。
