摘要
基于对磁通与电荷两者之间关系,阐述忆阻器器件的发现与应用。忆阻器作为一个"学习能力"极强的元件,可以记录任意时刻电阻关于时间的函数,起到高速有效地记忆流经它的电荷量的作用。制作作为一维(1D)ZnO纳米线材料,其表现的电阻渐变特性能够有效适用于突触的可塑性,将ZnO纳米线经过多次脉冲刺激后能够使其表现出稳定的电阻态。研究制作出的ZnO纳米线忆阻器在突触学习记忆功能方面具有卓越的应用空间。
Based on the study of the relationship between magnetic flux and charge, the discovery and application of memristor devices are discussed in this paper. Memristors as a "learning ability" extremely strong components, can record any time resistance function on time, play a high-speed effective memory of the charge flow through it. As one-dimensional(1D) nanowire materials, ZnO nanowire exhibits typical properties, which has great potential in the field of Synaptic biomimetic research, and its resistance gradient characteristics can be effectively applied to synaptic plasticity. At the same time, ZnO nanowire can exhibit stable resistance state after several pulses, so ZnO nanowire memristors have a great application space for the learning and memory function of synapses.
作者
熊媛
林海严
王风娇
XIONG Yuan;LIN Haiyan;WANG Fengjiao(Jiangsu Normal University,College of Physics and Electronic Engineering,Jiangsu 221116,China.)
出处
《集成电路应用》
2020年第11期1-3,共3页
Application of IC
基金
江苏省大学生创新创业训练计划项目(201910320156Y)。
