摘要
研究了采用某款单片外延设备批量生长8英寸(1英寸=2.54 cm)薄层Si外延片时芯片性能参数的变化。研究发现随着设备预防性维护(PM)后使用天数的增加,外延层厚度不均匀性变化很小,电阻率不均匀性逐渐增大,边缘过渡区逐渐加长,注入反应腔室的掺杂量必须不断减少才能保持外延层电阻率稳定。通过研究PM后不同天数外延片制备肖特基势垒二极管(SBD)的击穿电压发现,外延片不同区域制备的SBD击穿电压差随PM后天数的增加而增加。通过增加外延片边缘厚度,提高了PM后期外延片边缘区域制备SBD的击穿电压,击穿电压最大值与最小值之差从4.34 V减小到2.88 V,满足客户使用要求。
The performance parameter changes of the 8-inch(1 inch=2.54 cm)thin-layer silicon epitaxial wafers processed with a single wafer epitaxial equipment during the mass production were studied.It is found that with the increase of days after preventive maintenance(PM)of the equipment,the thickness nonuniformity of the epitaxial layer changes little,the resistivity nonuniformity increases gradually,and the edge transition region lengthens gradually.The amount of dopant injected into the reaction chamber should be reduced continuously to keep the resistivity of the epitaxial layer stable.By studying the breakdown voltage of the Schottky barrier diode(SBD)fabricated with epitaxial wafers on different days after PM,it is found that with the increase of days after PM,the breakdown voltage difference of SBDs prepared in different areas of epitaxial wafers increases.By increasing the edge thickness of epitaxial wafers,the breakdown voltage of SBDs prepared in the edge region of the epitaxial wafer over the later PM period was increased.The breakdown voltage difference between the maximum value and minimum value was decreased from 4.34 V to 2.88 V,which meets the customer requirements.
作者
米姣
薛宏伟
袁肇耿
吴晓琳
张佳磊
张双琴
石巧曼
Mi Jiao;Xue Hongwei;Yuan Zhaogeng;Wu Xiaolin;Zhang Jialei;Zhang Shuangqin;Shi Qiaoman(Silicon Base Epitaxial Material Engineering Technology Innovation Center of Hebei Province,Hebei Poshing Electronics Technology Co.,Ltd.,Shijiazhuang 050200,China)
出处
《半导体技术》
CAS
北大核心
2020年第11期874-879,904,共7页
Semiconductor Technology
基金
河北省科技重大专项资助项目(19010206Z)。
关键词
薄层硅外延片
电阻率
过渡区
击穿电压
不均匀性
维护周期
thin-layer Si epitaxial wafer
resistivity
transition zone
breakdown voltage
non-uniformity
maintenance period
