摘要
高压大容量IGBT模块内部异质材料热膨胀系数失配是模块疲劳老化失效的主要机理。为了降低模块异质材料间热膨胀系数的差异,提高其功率循环能力与长期运行可靠性,该文提出功率模块采用全铜材料实线电学互连的思路,系统地研究了IGBT芯片铜金属化、铜引线键合与铜母线端子超声焊接等新技术,实现了IGBT功率模块全铜化封装的成套工艺,研发了基于全铜工艺的大容量高性能750A/6500V IGBT模块,首次实现了全铜工艺的高压模块。与传统铝工艺相比,全铜工艺模块不仅使导通损耗降低了10%、浪涌电流能力提升了20%,而且功率循环能力提高了16倍,提升了功率模块的运行韧性与应用可靠性。
The mismatch of coefficient of thermal expansion(CTE)of heterogeneous materials in high power IGBT modules is the main mechanism of module fatigue and aging failure.The idea of fullcopper power interconnection in power module was proposed in order to reduce the difference of CTE between heterogeneous materials and improve its power cycle capability and long-term operation reliability in this paper.The new technologies such as IGBT chip copper metallization,copper wire bonding and copper busbar terminal ultrasonic welding were systematically investigated.A complete set of process technology for full-copper packaging of IGBT module was realized and 750A/6500V high performance IGBT module was developed for the first time.Compared with the traditional aluminum process,the full-copper process module reduced the conduction loss by 10%,and increased more than 20%higher surge current capability and sixteen times higher power cycling capability as well.The operation ruggedness and application reliability of power module were also improved.
作者
刘国友
罗海辉
张鸿鑫
王彦刚
潘昭海
Liu Guoyou;Luo Haihui;Zhang Hongxin;Wang Yangang;Pan Zhaohai(State Key Laboratory of Advanced Power Semiconductor Devices,Zhuzhou 412001,China;Zhuzhou CRRC Times Electric Co.Ltd,Zhuzhou 412001,China;Zhuzhou CRRC Times Semiconductor Co.Ltd,Zhuzhou 412001,China)
出处
《电工技术学报》
EI
CSCD
北大核心
2020年第21期4501-4510,共10页
Transactions of China Electrotechnical Society
