摘要
本文针对晶体三极管输入/输出特性曲线的测量给出两种方法,一种是采用仿真实验Multisim进行测试,另外一种方法是利用晶体三极管的分立元件电路进行测试,并通过比较两种测试方法测得的数据对两种测试方法进行了对比分析和总结。
This paper gives two methods to measure the input/output characteristic curve of transistor,one is to use simulation experiment Multisim to test,the other is to use discrete component circuit of transistor to test,and by comparing the data measured by the two testing methods,the two testing methods are analyzed and summarized.
作者
石静苑
栾爽
李井泉
Shi Jingyuan;Luan Shuang;Li Jingquan(Basic College of Aviation,Air Force Aviation University,Changchun Jilin,130022)
出处
《电子测试》
2020年第21期52-54,共3页
Electronic Test
关键词
晶体三极管
输入/输出特性曲线
仿真实验
transistor crystal
input/output characteristic curve
simulation experiment
