摘要
Si C作为第三代半导体材料的代表性材料,具有宽禁带、高临界击穿电场、高电子饱和迁移速率和高导热率等优良特性,使其在电力电子器件领域得到广泛关注。通过采用电感耦合等离子体(ICP)设备对4H-SiC材料进行刻蚀工艺研究。该刻蚀实验采用Si O2膜作为刻蚀掩模,SFx/O2作为刻蚀工艺气体,通过一系列工艺参数调整及刻蚀结果分析,得出了ICP源功率、RF偏压功率、氧气流量和腔体压强对Si C材料刻蚀速率、刻蚀选择比以及刻蚀形貌的影响,并得到最优工艺参数。对刻蚀样片进行后处理工艺,获得了底部圆滑、侧壁垂直的沟槽结构,该沟槽结构对4H-SiC功率UMOSFET性能优化起到关键性作用。
As one of the third generationsemiconductor materials,Si C has outstanding properties such as wide bandgap,high critical breakdown electric field,high electron drift velocity and high thermal conductivity,therefore it is currently attracted lots of attention and has been widely studied as a promising materials candidate for the application of power electric devices. Inductively coupled plasma( ICP) equipment is adopted to etch 4 H-SiC for etching process research. This etching experiment uses Si O2 as the mask and SFx/O2 as the process gas,through a series of process parameters adjustment and corresponding etching results analysis,the effects of ICP source power,RF bias power,O2 flow and pressure on the Si C etching rate,etching selectivity ratio and profile are investigated and the optimized conditions are achieved. Finally high quality trench structure with round-shape trench bottom and vertical sidewall has been obtained after the post-process. The trench structure plays a key role in optimizing the performance of 4 H-SiC power UMOSFET.
作者
周燕萍
朱帅帅
李茂林
左超
杨秉君
ZHOU Yanping;ZHU Shuaishuai;LI Maolin;ZUO Chao;YANG Bingjun(ULVAC Research Center Suzhou Co Ltd,Suzhou 215026,China)
出处
《传感器与微系统》
CSCD
2020年第11期152-154,157,共4页
Transducer and Microsystem Technologies
