摘要
采用改进的热分解法制备了具有半导体效应的CuInS2量子点,量子点尺寸均匀、大小为4.2 nm。组装的Au/CuInS2/FTO阻变存储器件表现出典型的双极性阻变特点,其开态电压为-3.8 V,关态电压为4 V,ON/OFF开关比约为103。对器件的I⁃V特性曲线线性拟合发现,器件的阻变机制在高阻态时表现为空间限制电荷(SCLC)传导机制,在低阻态时表现为欧姆传导机制。器件的阻变特性主要是由于电荷被CuInS2薄膜中的缺陷产生的势阱捕获导致。通过调节陷阱势垒高度引起电荷在陷阱中移动,导致导电通路的产生和断裂,使器件处于高阻态和低阻态。
CuInS2 quantum dots with semiconductor effect were prepared by improved thermal decomposition meth⁃od,and the uniform size of quantum dots was 4.2 nm.The Au/CuInS2/FTO device exhibited typical bipolar resis⁃tance characteristics,with an ON/OFF switching ratio of about 103,an ON voltage of-3.8 V and an OFF voltage of 4 V.The resistance mechanism of the device was studied by linear fitting the I⁃V characteristic curve of the device.The device has space⁃limiter charge(SCLC)conduction mechanism in high resistance state and ohmic conduction mechanism in low resistance state.The resistance characteristic of the device is mainly caused by the charge being trapped by the potential well generated by the defect in the CuInS2 film.The charge is moved in the trap by adjust⁃ing the height of the trap barrier,which results in the generation and fracture of the conductive path,so that the device is in a high resistance state and a low resistance state.
作者
邵雅洁
沈杰
龚少康
陈文
周静
SHAO Ya-Jie;SHEN Jie;GONG Shao-Kang;CHEN Wen;ZHOU Jing(School of Materials Science and Engineering,Wuhan University of Technology,Wuhan 430070,China)
出处
《无机化学学报》
SCIE
CAS
CSCD
北大核心
2020年第11期2093-2099,共7页
Chinese Journal of Inorganic Chemistry
基金
国家自然科学基金(No.51572205)
教育部装备预研联合基金(No.6141A02022262)资助项目
关键词
量子点
半导体
阻变开关
SCLC传导机制
陷阱势垒高度
quantum dots
semiconductor
resistance switching
SCLC conduction mechanism
trap barrier height
