摘要
介绍了一种利用高介电常数薄膜改进的、制作于绝缘衬底上的横向绝缘栅双极型晶体管(SOI-LIGBT)。一方面,覆盖在硅表面的高介电常数薄膜具有引导电通量的作用,可优化器件漂移区的表面电场分布,在器件耐压等级不变的情况下,节约芯片面积,提高导电能力。另一方面,采用高介电常数薄膜有利于减少漂移区中存储的非平衡载流子,可缩短器件的关断时间,降低器件的关断损耗。仿真结果表明,相比于传统500 V等级的SOI-LIGBT,利用高介电常数薄膜改进的新器件可使器件长度缩短15%,导通压降降低10%,关断时间缩短42%,关断损耗减小61%。
A fast turn-off silicon-on-insulator lateral insulated gate bipolar transistor(SOI-LIGBT) improved by high-k film was proposed. Due to the high-k film’s attraction effect on the electric displacement lines, the lateral electric field on the surface of the drift region could be optimized. Therefore, under the same breakdown voltage, the chip area of the proposed device was reduced and its conductive ability was enhanced compared with that of the conventional one. In addition, the stored nonequilibrium carriers in the drift region were decreased by using the high-k film, so the turn-off time as well as the turn-off loss was reduced. Simulation results showed that, compared with the conventional 500 V class SOI-LIGBT, the improved device with high-k film presented the device’s length shortened by 15%,the on-state voltage drop reduced by 10%, the turn-off time decreased by 42% and the turn-off loss reduced by 61%.
作者
林靖杰
陈为真
程骏骥
陈星弼
LIN Jingjie;CHEN Weizhen;CHENG Junji;CHEN Xingbi(State Key Lab.of Elec.Thin Films and Integr.Dev.,Univ.of Elec.Sci.and Technol.of China,Chengdu610054,P.R.China)
出处
《微电子学》
CAS
北大核心
2020年第4期584-588,共5页
Microelectronics
基金
国家自然科学基金青年基金资助项目(61604030)。
