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一款高性能IGBT智能功率模块 被引量:2

A High-Performance IGBT Intelligent Power Module
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摘要 基于自主开发的600 V/30 A IGBT芯片研制了一款高性能智能功率模块(IPM)。该IPM采用引线框架、印制电路板(PCB)和直接覆铜(DBC)结构技术方案,对焊接和注塑封装工艺进行了优化,并对模块的热性能进行了计算。与三菱公司IPM在常温快速启停、高温空载快速启停、温升方面进行了对比试验分析。测试结果表明,采用自主开发IGBT芯片的IPM完全满足应用需求。该IPM在常温快速启停试验运行50 min后进行保护,保护时间比三菱公司IPM略长;在高温空载快速启停和温升方面,该IPM与三菱公司IPM无明显差异;在高温空载快速启停试验中,稳态下该IPM驱动器最高温度为105℃;温升试验中,采用该IPM驱动电机,电机温升为56℃。 A high-performance intelligent power module(IPM)was developed based on the selfdeveloped 600 V/30 A IGBT chip.The technical solution of lead frame,printed circuit board(PCB)and direct bonding copper(DBC)structure was adopted in the IPM.The welding and injection molding package processes were optimized.The thermal performance of the module was calculated.The IPM was compared with Mitsubishi's IPM for analysis in experiments of fast start-stop at room temperature,no-load fast start-stop at high temperature and temperature rise.The experimental results show that the IPM with self-developed IGBT chip fully meets the application needs.The IPM is protected in the fast start-stop experiment at room temperature after running for 50 min,which is slightly longer than that of the Mitsubishi's IPM.There is no obvious difference between the IPM and the Mitsubishi's IPM in terms of no-load fast start-stop at high temperature and temperature rise.In the no-load fast start-stop at high temperature experiment,the maximum temperature of the driver with the self-developed IPM is 105℃in the steady state.In the temperature rise experiment,the temperature rise of the motor which is driven by the selfdeveloped IPM is 56℃.
作者 陶崇勃 Tao Chongbo(CRRC Yongji Electric Co.,Ltd.,Xi'an 710018,China)
出处 《半导体技术》 CAS 北大核心 2020年第6期454-459,共6页 Semiconductor Technology
关键词 IGBT 智能功率模块(IPM) 封装 快速启停 热性能 IGBT intelligent power module(IPM) package fast start-stop thermal performance
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