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Aligned monolayer MoS2 ribbons growth on sapphire substrate via NaOH-assisted chemical vapor deposition 被引量:1

蓝宝石衬底上NaOH辅助CVD法制备有序单层MoS2条带
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摘要 This study reports the growth of aligned monolayer molybdenum disulfide(MoS2)ribbons on a sapphire substrate via NaOH-assisted chemical vapor deposition.The length of MoS2 ribbon is up to 400μm.The MoS2 ribbon has excellent single crystal properties,a carrier mobility of^150 cm^2V^-1s^-1,and a optical response of 103 mA W^-1 at a wavelength of 550 nm.The growth model of MoS2 ribbons was given.NaOH reacts with MoO3 to form sodium molybdate droplets,which increase the fluidity of the molybdenum source on the substrate,realizing the vapor-liquid-solid growth of MoS2 on sapphire.The monolayer MoS2 ribbons have two kinds of arrangements on the sapphire substrate,one is the oriented growth affected by the interlayer van der Waals force and the lattice,and the other is the aligned growth constrained by the sapphire step.Our results promote the basic research and device applications of MoS2,and introduce a new way of synthesizing other one dimensional(1D)and 2D nanostructures. 本文报道了一种在蓝宝石衬底上NaOH辅助化学气相沉积(CVD)生长有序排列单层MoS2条带的方法.MoS2条带具有优良的单晶性,其载流子迁移率为~150 cm^2V^-1s^-1,在550 nm波长下的光学响应为103 mA W^-1.单层MoS2条带在蓝宝石衬底上具有两种生长方式,其中一种为受层间范德华力以及晶格影响的取向生长,另一种为受蓝宝石台阶约束的平行生长.NaOH的引入量对MoS2形态与取向起重要作用,可以实现从取向性三角形晶畴,受衬底晶格影响的取向MoS2条带,受衬底台阶约束的平行条带,再到大尺寸杂乱取向三角形晶畴的连续可调.本文的结果有利于推动MoS2的基础研究及器件应用,也为合成其他一维和二维纳米结构开辟了新途径.
作者 Shike Hu Jing Li Xiaoyi Zhan Shuang Wang Longbiao Lei Yijian Liang He Kang Yanhui Zhang Zhiying Chen Yanping Sui Da Jiang Guanghui Yu Songang Peng Zhi Jin Xinyu Liu 胡诗珂;李晶;展肖依;王爽;雷龙彪;梁逸俭;康鹤;张燕辉;陈志蓥;隋妍萍;姜达;于广辉;彭松昂;金志;刘新宇(State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Microwave Devices and Integrated Circuits Department,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)
出处 《Science China Materials》 SCIE EI CSCD 2020年第6期1065-1075,共11页 中国科学(材料科学(英文版)
基金 This work was financially supported by the Science and Technology Commission of Shanghai Municipality(18511110700).
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