摘要
本实验利用质量分数为40%的硫酸铵((NH4)2SO4)溶液在相对较低的温度条件下实现了对单层二硒化钨(WSe2)的高效n型掺杂,同时利用浓度为18 mol/L的浓硫酸(H 2SO4)对单层WSe2样品在常温下进行浸泡处理,实现了对该材料的p型掺杂。将本实验的n型掺杂样品分别置于不同温度下反应,探索出单层WSe2在液相环境下高效掺杂反应稳定存在的临界温度为140℃。进一步地,通过抽真空和超纯水清洗的手段可分别实现对n型掺杂和p型掺杂WSe2的可回复调控。另外,研究还发现,对样品首先利用(NH4)2SO4溶液进行n型掺杂,再利用浓H2SO4进行p型掺杂的处理,可显著增强p型掺杂的效果。通过对单层WSe2进行简单有效的电荷掺杂,不但可以对其光致发光特性进行相关调制,还为基于WSe2的柔性半导体材料器件的设计提供了科学基础。
In this paper,we report a very facile and easy method to achieve electronic doping monolayer WSe2 efficiently.A mass fraction of 40%(NH4)2SO4 solution at a relatively low temperature can realize the n-type doping of WSe 2,while,the 98%H2SO4 gives rise to the p-type doping of WSe 2.It is found that the monolayer WSe 2 can keep its crystal structure stable up to as high as 140℃in(NH4)2SO4 solution to approach the maximum doping effect.Both n-type and p-type doping of monolayer WSe 2 are reversible by putting the samples in vacuum and followed by cleaning in ultrapure water.And the samples p-doping effects can be significantly enhanced by two-step reaction,which is n-doping in(NH4)2SO4 solution firstly and then followed by p-doping in H2SO4.Therefore,modulate the electronic doping of monolayer WSe 2 effectively not only demonstrates a simple way to tune its photoluminescence properties,but also of great importance to guide the design of WSe 2-based flexible electronic device.
作者
狄淑贤
赖泳爵
邱武
林乃波
詹达
DI Shuxian;LAI Yongjue;QIU Wu;LIN Naibo;ZHAN Da(College of Materials,Xiamen Univesity,Xiamen 361005,China;College of Physical Science and Technology,Xiamen University,Xiamen 361005,China)
出处
《材料导报》
EI
CAS
CSCD
北大核心
2020年第12期12025-12029,共5页
Materials Reports
基金
福建省自然科学基金(2017J01005)
国家博士后基金(2017M612133)。
关键词
单层二硒化钨
电荷掺杂
光致发光
费米面
热稳定性
monolayer WSe2
charge doping
photoluminescence
Fermi surface
thermal stability
