摘要
针对电感耦合等离子体(ICP)干法刻蚀后,AlGaN/GaN台面区域存在隔离电流高的问题,研究了不同退火氛围、时间、温度对台面隔离电流的影响。利用原子力显微镜(AFM)和X射线光电子能谱(XPS)及电学测量仪器对样品进行表征和测试。测试结果表明,在氧气和氮气氛围退火处理均能降低样品的隔离电流,且经退火处理后样品的隔离电流均处于10-9 A/mm数量级,但在氧气氛围中退火处理会使样品的欧姆接触电阻增大。在氮气氛围下的最佳退火处理条件为400℃、120 s。在该条件下样品经过退火处理后,在200 V直流偏压下测得样品的台面隔离电流仅为4.03×10^-9 A/mm,与未经退火处理的样品相比降低了4个数量级,而且在高温测试中样品的隔离电流仍然能够保持较低的数值。
In order to solve the problem of high isolation current of the AlGaN/GaN mesa region after inductively coupled plasma(ICP) etching, the influences in different annealing atmospheres, time and temperatures on isolation current of the mesa region were studied. The samples were characterized and tested by atomic force microscope(AFM),X-ray photoelectron spectroscopy(XPS) and electrical measurement setups. The test results indicate that annealing treatment in both of the oxygen and nitrogen atmospheres lead to the reduction of the isolation currents of the samples to the order of 10-9 A/mm. However, the ohmic contact resistance of the sample increases after the annealing treatment in oxygen atmosphere. In the nitrogen atmosphere, the best annealing treatment conditions are 400 ℃and 120 s. After annealing treatment under this condition, the isolation current in mesa region of the sample is only 4.03×10^-9 A/mm at the DC bias voltage of 200 V, which is 4 orders of magnitude lower than that of the sample without annealing treatment. Meanwhile, the isolation current of the sample remains the lower value in the high temperatures test.
作者
赵志波
杨兵
康玄武
张静
吴昊
孙跃
郑英奎
魏珂
Zhao Zhibo;Yang Bing;Kang Xuanwu;Zhang Jing;Wu Hao;Sun Yue;Zheng Yingkui;Wei Ke(School of Information Science and Technology,North China University of Technology,Beijing 100144,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)
出处
《半导体技术》
CAS
北大核心
2020年第4期293-297,311,共6页
Semiconductor Technology
基金
国家自然科学基金资助项目(61804172)
国家重点研发计划资助项目(2017YFB0403000,2016YFB0400100)
广东省重点领域研发计划资助项目(2019B010128001)。
